Infineon Technologies · HEXFET® Series
Infineon IRFR15N20DTRPBF, HEXFET® series, N-Channel MOSFET, 200V Vdss, 17A Id, 165mOhm Rds(on) at 10V, D-PAK (TO-252AA), -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Tc) |
| Power dissipation | 3W (Ta), 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 5.5V @ 250µA |
| Rds on (Max) @ id, vgs | 165mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 41 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 910 pF @ 25 V |
The IRFR15N20DTRPBF: That 200 V Vdss gives you a solid margin on a 48 V or 72 V bus, and it will handle the peak voltage on a 120 V DC link in a motor drive without derating anxiety.
Maximum Rds(on) is 165 mOhm with 10 V gate drive at 10 A drain current. At 10 A the conduction loss is 16.5 W — that number drives the heatsink decision.