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Infineon Technologies IRFR15N20DTRPBF

IRFR15N20DTRPBF HEXFET N-Ch 200V 17A MOSFET, DPAK

MPNIRFR15N20DTRPBF
End of Life

Infineon IRFR15N20DTRPBF, HEXFET® series, N-Channel MOSFET, 200V Vdss, 17A Id, 165mOhm Rds(on) at 10V, D-PAK (TO-252AA), -55°C to 175°C.

$1.56Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFR15N20DTRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation3W (Ta), 140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5.5V @ 250µA
Rds on (Max) @ id, vgs165mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds910 pF @ 25 V

Product details

200V, 17A N-Channel — what the drain rating means on your rail

The IRFR15N20DTRPBF: That 200 V Vdss gives you a solid margin on a 48 V or 72 V bus, and it will handle the peak voltage on a 120 V DC link in a motor drive without derating anxiety.

165 mOhm on-resistance — sizing the conduction loss

Maximum Rds(on) is 165 mOhm with 10 V gate drive at 10 A drain current. At 10 A the conduction loss is 16.5 W — that number drives the heatsink decision. The 140 W maximum power dissipation at the case (Tc) tells you the package can shed that heat if the board copper and airflow are adequate, but the 3 W at ambient (Ta) is a reminder: without a heatsink you are limited to light loads.

Gate charge and switching speed

Total gate charge at 10 V is 41 nC. For a 100 kHz hard-switched converter, that gate charge draws 4.1 mA from the driver — well within a standard gate-driver IC's capability. The 910 pF input capacitance at 25 V drain bias gives a rough handle on the Miller plateau; expect a few tens of nanoseconds rise time with a proper totem-pole driver.

Package and thermal path

Housed in the D-PAK (TO-252AA) surface-mount package, the IRFR15N20DTRPBF uses the centre tab as the drain connection — the PCB copper area under that tab is the primary thermal path. The -55 °C to 175 °C junction range covers military and industrial extremes; the 175 °C ceiling is a genuine advantage over 150 °C-rated parts in high-ambient environments like engine bays or downhole tools.

Frequently asked questions

Is IRFR15N20DTRPBF RoHS compliant?

Yes, it is listed as ROHS3 compliant.