100 V, 8.7 A N-channel HEXFET — the BOM-fit ceiling
Gate charge totals 10 nC at 10 V, so a 1 A gate driver can switch the FET in roughly 10 ns — this low Qg makes the part suitable for medium-frequency SMPS, DC-DC converters, and motor-drive output stages where switching losses matter.
DPak (TO-252) footprint — thermal and layout notes
The 310 pF input capacitance at 25 V drain-source means the gate driver sees a moderate capacitive load — a 10 Ω series gate resistor keeps the ringing under control without slowing the edge too much.
