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Infineon Technologies IRFR120ZTRPBF

IRFR120ZTRPBF N-Channel MOSFET, 100 V, 8.7 A, DPAK

MPNIRFR120ZTRPBF
End of Life

Infineon HEXFET® IRFR120ZTRPBF, N-Channel MOSFET, 100 Vdss, 8.7 A continuous drain, 190 mOhm Rds(on) at 10 V, 10 nC gate charge, DPAK (TO-252) surface-mount package, -55°C to 175°C junction temperature.

$0.81Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFR120ZTRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.7A (Tc)
Power dissipation35W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 5.2A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds310 pF @ 25 V

Product details

100 V, 8.7 A N-channel HEXFET — the BOM-fit ceiling

Gate charge totals 10 nC at 10 V, so a 1 A gate driver can switch the FET in roughly 10 ns — this low Qg makes the part suitable for medium-frequency SMPS, DC-DC converters, and motor-drive output stages where switching losses matter.

DPak (TO-252) footprint — thermal and layout notes

The 310 pF input capacitance at 25 V drain-source means the gate driver sees a moderate capacitive load — a 10 Ω series gate resistor keeps the ringing under control without slowing the edge too much.

Frequently asked questions

What is the difference between IRFR120ZTRPBF and IRFR120Z?

The IRFR120ZTRPBF is the tape-and-reel packaged variant of the IRFR120Z die in the DPAK case. The suffix 'TRPBF' indicates Tape & Reel delivery and ROHS3 compliance. The die and electrical ratings are identical to the tube-shipped IRFR120Z.