Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFR120NTRPBF, N-Channel MOSFET, 100V Vdss, 9.4A Id, 210 mOhm Rds(on) at 10V, 25 nC Qg, D-Pak (TO-252-3), -55°C to 175°C.
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9.4A (Tc) |
| Power dissipation | 48W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 210mOhm @ 5.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 330 pF @ 25 V |
This is the conduction loss floor at 25°C junction; actual Rds(on) rises with temperature per the normalised curve in the datasheet, so the thermal budget must account for the higher resistance at the operating junction temperature. Total gate charge is 25 nC at 10 V.
