The 65 nC total gate charge at 10 V tells the driver what it needs to switch the device at frequency; a 100 kHz hard-switched converter drawing 6.5 mA average from the gate drive is well within a standard driver's capability.
IRFR1205TRPBF
Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFR1205TRPBF, N-Channel MOSFET, 55 V Vdss, 44 A continuous drain, 27 mOhm Rds(on) at 10 V, 65 nC gate charge, D-Pak (TO-252) surface-mount package, -55°C to 175°C operating junction temperature.
[IN STOCK] In Stock: 547 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 44A (Tc) |
| Power dissipation | 107W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 27mOhm @ 26A, 10V |
| Gate charge (Qg) (Max) @ vgs | 65 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 25 V |
Technical details
IRFR1205TRPBF
[ALLOC] verified