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Infineon Technologies IRFR1205TRPBF

IRFR1205TRPBF N-Channel MOSFET, 55V 44A DPAK

MPNIRFR1205TRPBF
End of Life

Infineon HEXFET IRFR1205TRPBF, N-Channel MOSFET, 55 V Vdss, 44 A continuous drain, 27 mOhm Rds(on) at 10 V, 65 nC gate charge, D-Pak (TO-252) surface-mount package, -55°C to 175°C operating junction temperature.

$1.49Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFR1205TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C44A (Tc)
Power dissipation107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs27mOhm @ 26A, 10V
Gate charge (Qg) (Max) @ vgs65 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 25 V

Product details

The 65 nC total gate charge at 10 V tells the driver what it needs to switch the device at frequency; a 100 kHz hard-switched converter drawing 6.5 mA average from the gate drive is well within a standard driver's capability.

Thermal and switching — staying inside the SOA

Operating junction temperature spans -55°C to 175°C, so the part handles automotive under-hood and industrial environments where ambient heat pushes the die. The 1300 pF input capacitance at 25 V drain bias is moderate — the gate drive sees a capacitive load that rises with Vds, so the driver's peak current must be sized for the full Ciss at the operating voltage. The 4 V threshold at 250 µA is a typical hard-switching turn-on point; the 10 V drive voltage for minimum Rds(on) is standard for logic-level gate drives that can source 10 V.

Frequently asked questions

What is the Rds(on) of IRFR1205TRPBF?

This is the value to use for worst-case conduction loss calculations in the thermal budget.

Is IRFR1205TRPBF RoHS compliant?

Yes, it is ROHS3 compliant per the listing.