Infineon HEXFET® N-channel MOSFET, IRFR1018ETRPBF, 60 V drain-source, 56 A continuous drain, 8.4 mOhm on-resistance at 10 V gate drive, DPAK (TO-252) surface mount, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 56A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 8.4mOhm @ 47A, 10V |
| Gate charge (Qg) (Max) @ vgs | 69 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2290 pF @ 50 V |
The Infineon IRFR1018ETRPBF is a 60 V, 56 A N-channel MOSFET from the HEXFET® series, housed in a DPAK (TO-252-3) surface-mount package. It is designed for high-efficiency power switching in applications such as DC-DC converters, motor drives, and power supply output stages where low conduction loss is critical.
ROHS3 compliant, so it fits lead-free assembly processes without exemption paperwork.
IRFR1018ETRPBF is Active in production per Infineon's lifecycle status. There is no end-of-life notice or last-time-buy window. It is a current-production part.
The maximum on-resistance is 8.4 mOhm at a drain current of 47 A with a 10 V gate drive. This is the rating that determines conduction loss in the switching loop.
The continuous drain current rating is 56 A at a case temperature of 25 °C. Derating is required for higher ambient temperatures or reduced heatsinking.
The IRFR1018ETRPBF is the tape-and-reel variant of the IRFR1018E. Electrically identical — same 60 V Vdss, 56 A Id, 8.4 mOhm Rds(on). The suffix indicates packaging form, not a functional change.