IRFR024NTRPBF

Infineon Technologies · HEXFET® Series

IRFR024NTRPBF, HEXFET® series, N-Channel MOSFET, 55V Vdss, 17A Id, 75mOhm Rds(on) at 10V, 20nC Qg, D-Pak (TO-252) surface mount, -55°C to 175°C.

Infineon Technologies IRFR024NTRPBF
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[IN STOCK] In Stock: 26,372 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFR024NTRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs75mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds370 pF @ 25 V

Technical details

Gate drive and switching: 20 nC total gate charge

A 100 kHz hard-switched application drawing 20 nC per cycle needs 2 mA average gate drive current — well within the capability of most driver ICs. The ±20 V gate-source rating gives headroom for ringing on long gate traces.

This makes the part suitable for under-hood automotive, downhole instrumentation, or power supplies that see sustained thermal cycling.

Package and thermal: D-Pak (TO-252) surface mount

For 45 W dissipation at the case, the board layout needs a minimum of 1 square inch of 2 oz copper on the drain plane to keep junction temperature within limits. The tape-and-reel option (TR suffix) is the standard production format; cut-tape (CT) is available for prototyping.

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