Infineon HEXFET® IRFP9140NPBF, P-Channel MOSFET, 100 V Vdss, 23 A Id, 117 mOhm Rds(on) @ 13 A, 10 V, 97 nC Qg, TO-247-3 (TO-247AC) through-hole, -55 to 175 °C junction.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 23A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 117mOhm @ 13A, 10V |
| Gate charge (Qg) (Max) @ vgs | 97 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 25 V |
The TO-247-3 (TO-247AC) package has a large exposed metal tab — intended for screw or clip attachment to a heatsink.
The 175 °C Tj max gives extra headroom in a sealed enclosure or high-vibration environment where heatsinking is constrained.
No direct pin-compatible second-source is listed. The IPD50R950CEAUMA1 is a different class — N-channel, 500 V, surface-mount DPAK — and is not a functional substitute for this P-channel 100 V through-hole MOSFET.
Yes, it carries ROHS3 compliance status.
At 13 A with 10 V gate drive, the 117 mOhm max on-resistance produces about 20 W conduction loss. This sets the heatsink requirement — a TO-247 bolted to a 2–3 °C/W heatsink keeps the junction below 125 °C at that current. Derate for higher ambient or reduced airflow.