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Infineon Technologies IRFP7537PBF

IRFP7537PBF MOSFET N-Ch 60V 172A TO-247, 3.3mOhm

MPNIRFP7537PBF
End of Life

Infineon HEXFET®, StrongIRFET™ IRFP7537PBF, N-Channel MOSFET, 60 V Vdss, 172 A Id, 3.3 mOhm Rds(on) @ 10 V, TO-247-3, Through Hole, -55°C to 175°C.

$3.36Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFP7537PBF Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C172A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id3.7V @ 150µA
Rds on (Max) @ id, vgs3.3mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs210 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7020 pF @ 25 V

Product details

60 V, 172 A N-channel in TO-247 — what it delivers

The Infineon IRFP7537PBF is a 60 V N-channel MOSFET from the HEXFET® and StrongIRFET™ series, rated for 172 A continuous drain current at 25 °C case temperature. The 3.3 mOhm maximum on-resistance at 100 A and 10 V gate drive puts it in the low-Rds(on) tier for a through-hole TO-247 part, which directly reduces conduction losses in high-current switching stages like motor drives, battery chargers, and DC-DC converters. The 210 nC gate charge at 10 V means the gate driver needs enough peak current to charge that capacitance quickly — factor that into driver selection and switching loss calculations. The 230 W power dissipation rating sets the thermal budget: a heatsink sized for the junction-to-case thermal path is mandatory to stay inside the 175 °C maximum junction temperature.

Mounting and rework — TO-247 with through-hole leads

Through-hole TO-247-3 package, three leads. The large tab and screw hole are the primary heat path — use a thermal interface material rated for the dissipation.

Lifecycle and sourcing — active, no LTB pressure

The IRFP7537PBF carries an Active lifecycle status per the manufacturer. It is suitable for new production builds and ongoing BOM maintenance without obsolescence risk.

Frequently asked questions

What is the Rds(on) of IRFP7537PBF?

The maximum Rds(on) is 3.3 mOhm at 100 A drain current and 10 V gate drive. That is the figure to use for worst-case conduction loss calculations in your thermal design.

What is the gate charge of IRFP7537PBF?

The maximum total gate charge (Qg) is 210 nC at 10 V gate drive. That is a key parameter for sizing the gate driver's peak current capability and estimating switching losses.