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Infineon Technologies IRFP4768PBF

IRFP4768PBF HEXFET N-Channel MOSFET, 250 V, 93 A, 17.5 mOhm

MPNIRFP4768PBF
End of Life

Infineon HEXFET series, IRFP4768PBF, N-Channel MOSFET, 250 Vdss, 93 A Id, 17.5 mOhm Rds(on) at 10 V, 270 nC Qg, TO-247AC through-hole, -55°C to 175°C.

$7.12Ref. price · indicative, final on quote
Infineon Technologies IRFP4768PBF datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFP4768PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C93A (Tc)
Power dissipation520W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs17.5mOhm @ 56A, 10V
Gate charge (Qg) (Max) @ vgs270 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10880 pF @ 50 V

Product details

250 V, 93 A N-channel — TO-247AC through-hole

The IRFP4768PBF is an Infineon HEXFET series N-channel power MOSFET.

Maximum on-resistance is 17.5 mOhm at Vgs = 10 V and 56 A drain current. This low Rds(on) keeps conduction losses manageable at high currents — at 56 A the dissipation is about 55 W, within the 520 W case-rated maximum, but the junction-to-case thermal path must be well-managed. Gate drive is specified at 10 V for the rated Rds(on). Input capacitance is 10880 pF at Vds = 50 V. This Ciss value, combined with the gate charge, sets the switching energy.

Active production, TO-247AC package

The part ships in a TO-247AC through-hole package — three leads, large tab for heatsink mounting. The lead-free finish is ROHS3 compliant.

Frequently asked questions

What is the datasheet for IRFP4768PBF?

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Is IRFP4768PBF in stock?

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