250 V, 93 A N-channel — TO-247AC through-hole
The IRFP4768PBF is an Infineon HEXFET series N-channel power MOSFET.
Maximum on-resistance is 17.5 mOhm at Vgs = 10 V and 56 A drain current. This low Rds(on) keeps conduction losses manageable at high currents — at 56 A the dissipation is about 55 W, within the 520 W case-rated maximum, but the junction-to-case thermal path must be well-managed. Gate drive is specified at 10 V for the rated Rds(on). Input capacitance is 10880 pF at Vds = 50 V. This Ciss value, combined with the gate charge, sets the switching energy.
Active production, TO-247AC package
The part ships in a TO-247AC through-hole package — three leads, large tab for heatsink mounting. The lead-free finish is ROHS3 compliant.