IRFP4668PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRFP4668PBF N-channel MOSFET, 200 V drain-source, 130 A continuous drain, 9.7 mOhm Rds(on) at 10 V, TO-247-3 through-hole, -55°C to 175°C operating junction.

Infineon Technologies IRFP4668PBF
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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFP4668PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C130A (Tc)
Power dissipation520W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs9.7mOhm @ 81A, 10V
Gate charge (Qg) (Max) @ vgs241 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10720 pF @ 50 V

Technical details

200 V, 130 A, 9.7 mOhm — the conduction-loss floor for high-current switching

The IRFP4668PBF: That power figure lands squarely in the domain of industrial motor drives, high-current DC-DC converters, and battery isolation switches where a TO-247AC package with a heatsink is the norm.

Total gate charge is 241 nC at 10 V. Input capacitance is 10720 pF at 50 V drain-source.

Through-hole TO-247AC — thermal and mechanical fit

The TO-247-3 package (supplier device package TO-247AC) is a through-hole part with a large exposed metal tab.

The ROHS3 compliance covers the current regulatory requirements for most markets.

IRFP4668PBF
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