IRFP4468PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRFP4468PBF, N-Channel MOSFET, 100 V drain-source, 195 A continuous drain, 2.6 mOhm Rds(on) at 10 V, 540 nC gate charge, TO-247AC through-hole, -55°C to 175°C junction temperature.

Infineon Technologies IRFP4468PBF
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Technical specifications

IRFP4468PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation520W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs2.6mOhm @ 180A, 10V
Gate charge (Qg) (Max) @ vgs540 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds19860 pF @ 50 V

Technical details

540 nC gate charge — driver current budget

Total gate charge is 540 nC at 10 V. For a switching frequency of 20 kHz, the average gate drive current needed is 540 nC × 20 kHz = 10.8 mA, but the peak current during the Miller plateau determines the driver's instantaneous capability.

TO-247AC through-hole — thermal and mechanical fit

Housed in a TO-247-3 (TO-247AC) through-hole package, this part dissipates up to 520 W at the case. The through-hole leads need a drilled PCB or a heatsink with screw terminals — not a surface-mount reflow step.

IRFP4468PBF
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