IRFP4368PBF
Infineon Technologies · HEXFET® Series
MOSFET N-CH 75V 195A TO247AC
[IN STOCK] In Stock: 2,349 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 520W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.85mOhm @ 195A, 10V |
| Gate charge (Qg) (Max) @ vgs | 570 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 19230 pF @ 50 V |
IRFP4368PBF
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