IRFP4332PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRFP4332PBF, N-Channel MOSFET, 250V Vdss, 57A Id, 33mOhm Rds(on) at 10V, 150nC Qg, TO-247-3 through-hole, -40°C to 175°C junction.

Infineon Technologies IRFP4332PBF
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Technical specifications

IRFP4332PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C57A (Tc)
Power dissipation360W (Tc)
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs33mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5860 pF @ 25 V

Technical details

250 V, 57 A — the power-stage anchor

The 150 nC total gate charge at 10 V means the gate driver must supply about 15 mA average current to switch at 100 kHz — well within the capability of a standard totem-pole driver like the IR2110.

Rds(on) at 35 A — where the heat goes

At 35 A load current and 10 V gate drive, the 33 mOhm Rds(on) produces 40.4 W of conduction loss at 25 °C junction. That figure climbs with junction temperature — the datasheet normalised curve typically shows 1.6× the 25 °C value at 125 °C junction, pushing loss toward 65 W.

The ±30 V maximum gate-source rating gives headroom for gate-drive overshoot.

Through-hole TO-247AC — mounting and thermal path

The TO-247-3 (TO-247AC) package uses a standard through-hole footprint with a mounting hole for a screw or clip to the heatsink. The exposed metal tab is the drain.

IRFP4332PBF
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