250 V, 57 A — the power-stage anchor
The IRFP4332PBF is an Infineon HEXFET N-channel power MOSFET rated at 250 V drain-to-source with a continuous drain current of 57 A at 25 °C case temperature. The 150 nC total gate charge at 10 V means the gate driver must supply about 15 mA average current to switch at 100 kHz — well within the capability of a standard totem-pole driver like the IR2110.
Rds(on) at 35 A — where the heat goes
At 35 A load current and 10 V gate drive, the 33 mOhm Rds(on) produces 40.4 W of conduction loss at 25 °C junction. That figure climbs with junction temperature — the datasheet normalised curve typically shows 1.6× the 25 °C value at 125 °C junction, pushing loss toward 65 W. The 360 W maximum power dissipation rating in the TO-247AC package assumes the case is held at 25 °C; real-world heatsink selection must derate from that ceiling.
Gate charge and switching speed
The 150 nC total gate charge at 10 V means the gate driver must supply average current to switch at frequency. The ±30 V maximum gate-source rating gives headroom for gate-drive overshoot.
Through-hole TO-247AC — mounting and thermal path
The TO-247-3 (TO-247AC) package uses a standard through-hole footprint with a mounting hole for a screw or clip to the heatsink. The exposed metal tab is the drain.