100 V, 120 A, 4.5 mOhm — the high-current switch for the TO-247 footprint
The Infineon IRFP4110PBF is an N-channel enhancement-mode MOSFET from the HEXFET® series, built on planar stripe technology. At 75 A, I²R loss is about 25 W; the TO-247AC package with its large copper tab can sink that into a heatsink, but the thermal path from junction to case (not stated here) must be factored into the heatsink selection.
Gate charge and switching budget
Total gate charge at 10 V is 210 nC — a heavy figure that demands a gate driver capable of sourcing several amperes peak to hit the target switching speed. The input capacitance (Ciss) is 9620 pF at 50 V drain-to-source; this capacitance dominates the Miller plateau duration and sets the minimum dead-time in a half-bridge leg. The gate threshold voltage is 4 V maximum at 250 µA drain current, so a 10 V gate drive is needed to achieve the rated Rds(on). The absolute maximum gate-to-source voltage is ±20 V — stay well below that to avoid oxide rupture.
Lifecycle and sourcing
The junction temperature range is -55°C to 175°C.