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Infineon Technologies IRFP4110PBF

IRFP4110PBF HEXFET N-Channel MOSFET, 100V 120A TO-247AC

MPNIRFP4110PBF
End of Life

Infineon HEXFET® IRFP4110PBF, N-Channel MOSFET, 100 V Vdss, 120 A continuous drain, 4.5 mOhm Rds(on) at 75 A, 10 V, TO-247AC through-hole package, -55 to 175 °C junction temperature.

$4.73Ref. price · indicative, final on quote
Infineon Technologies IRFP4110PBF datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFP4110PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation370W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.5mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs210 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9620 pF @ 50 V

Product details

100 V, 120 A, 4.5 mOhm — the high-current switch for the TO-247 footprint

At 75 A, I²R loss is about 25 W; the TO-247AC package with its large copper tab can sink that into a heatsink, but the thermal path from junction to case (not stated here) must be factored into the heatsink selection.

The input capacitance (Ciss) is 9620 pF at 50 V drain-to-source; this capacitance dominates the Miller plateau duration and sets the minimum dead-time in a half-bridge leg. The absolute maximum gate-to-source voltage is ±20 V — stay well below that to avoid oxide rupture.

Frequently asked questions

What is the Rds(on) of IRFP4110PBF at 75A and 10V?

This is the worst-case figure at 25 °C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet.