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Infineon Technologies IRFP3710PBF
Infineon Technologies

IRFP3710PBF HEXFET N-Channel MOSFET, 100 V, 57 A, TO-247AC

MPNIRFP3710PBF
End of Life

Infineon HEXFET IRFP3710PBF, N-Channel MOSFET, 100 Vdss, 57 A, 25 mOhm Rds(on) at 10 V, 190 nC gate charge, TO-247AC through-hole, -55°C to 175°C.

$3.22Ref. price · indicative, final on quote
IRFP3710PBF datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFP3710PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C57A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs25mOhm @ 28A, 10V
Gate charge (Qg) (Max) @ vgs190 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3000 pF @ 25 V

Product details

100 V, 57 A — the TO-247 power switch for motor and supply rails

The IRFP3710PBF: It comes in a TO-247AC through-hole package — the three-lead tabbed case that bolts to a heatsink and handles 200 W of dissipation at the case. 25 mOhm at 28 A, 10 V is the conduction-loss floor for this 100 V device.

Total gate charge is 190 nC at 10 V. Input capacitance Ciss is 3000 pF at 25 V. 190 nC gate charge sets the crossover time in a half-bridge leg.

Temperature range and mounting

Junction temperature range is -55°C to 175°C. Gate threshold voltage is 4 V maximum at 250 µA. Recommended drive voltage for minimum Rds(on) is 10 V.

Frequently asked questions

What is the Rds(on) of IRFP3710PBF?

That is the spec to use for conduction-loss calculations at the nominal operating point.