Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFP3710PBF, N-Channel MOSFET, 100 Vdss, 57 A, 25 mOhm Rds(on) at 10 V, 190 nC gate charge, TO-247AC through-hole, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 57A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 25mOhm @ 28A, 10V |
| Gate charge (Qg) (Max) @ vgs | 190 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3000 pF @ 25 V |
The IRFP3710PBF: It comes in a TO-247AC through-hole package — the three-lead tabbed case that bolts to a heatsink and handles 200 W of dissipation at the case. 25 mOhm at 28 A, 10 V is the conduction-loss floor for this 100 V device.
Total gate charge is 190 nC at 10 V. Input capacitance Ciss is 3000 pF at 25 V. 190 nC gate charge sets the crossover time in a half-bridge leg.
