What this HEXFET N-channel MOSFET is and where it fits
The IRFP3415PBF is an N-channel power MOSFET from the HEXFET series, rated for 150 V drain-source breakdown and 43 A continuous drain current at 25°C case temperature. It comes in a through-hole TO-247AC package — the standard three-lead footprint for high-current power stages. The 42 mOhm maximum on-resistance at 22 A with a 10 V gate drive keeps conduction losses manageable in switching supplies, motor drives, and battery management circuits. Junction temperature spans -55°C to 175°C, so it handles the thermal cycling of industrial and automotive environments without derating surprises.
Gate drive and switching — what the numbers mean for your driver stage
Total gate charge is 200 nC at 10 V gate drive. Input capacitance is 2400 pF at 25 V.
Package and mounting — TO-247AC in practice
The TO-247AC package is the same three-hole footprint as the TO-247, with a metal tab for direct heatsink mounting. Use a thermal pad or mica insulator with grease; the tab is electrically connected to drain.
Lifecycle and sourcing — active, no LTB pressure
The IRFP3415PBF carries an Active lifecycle status with ROHS3 compliance.