IRFP3415PBF

Infineon Technologies · HEXFET® Series

IRFP3415PBF, HEXFET series, N-Channel MOSFET, 150V Vdss, 43A Id, 42mOhm Rds(on) at 10V, TO-247AC through-hole, -55°C to 175°C.

Infineon Technologies IRFP3415PBF
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Technical specifications

IRFP3415PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 22A, 10V
Gate charge (Qg) (Max) @ vgs200 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 25 V

Technical details

It comes in a through-hole TO-247AC package — the standard three-lead footprint for high-current power stages. The 42 mOhm maximum on-resistance at 22 A with a 10 V gate drive keeps conduction losses manageable in switching supplies, motor drives, and battery management circuits.

Input capacitance is 2400 pF at 25 V.

Package and mounting — TO-247AC in practice

The TO-247AC package is the same three-hole footprint as the TO-247, with a metal tab for direct heatsink mounting. Use a thermal pad or mica insulator with grease; the tab is electrically connected to drain.

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