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Infineon Technologies IRFP3206PBF
Infineon Technologies

IRFP3206PBF HEXFET N-Ch MOSFET, 60V 120A TO-247AC

MPNIRFP3206PBF
End of Life

Infineon IRFP3206PBF HEXFET N-Channel MOSFET, 60 V drain-source, 120 A continuous drain, 3 mOhm Rds(on) at 75 A, 170 nC gate charge, TO-247AC through-hole package, -55 to 175 °C junction temperature.

$3.49Ref. price · indicative, final on quote
IRFP3206PBF datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFP3206PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation280W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs3mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6540 pF @ 50 V

Product details

60 V, 120 A, 3 mOhm — the conduction-loss floor

The IRFP3206PBF is an Infineon HEXFET N-channel power MOSFET in a TO-247AC through-hole package.

The 3 mOhm Rds(on) at 75 A is the lowest on-resistance tier in the 60 V HEXFET family; at full 120 A load the I²R loss is 43 W, which the 280 W power-dissipation rating can handle with an adequate heatsink. The 170 nC total gate charge at 10 V means the gate driver must supply 17 mA average at 100 kHz switching frequency — a standard 2 A gate-driver IC has ample headroom, but the gate-drive loop inductance must be kept under 10 nH to avoid ringing at turn-on.

Junction temperature range — military-grade thermal margin

This makes it a candidate for avionics power supplies, downhole instrumentation, and under-hood automotive ECUs where the ambient can exceed 125 °C and the junction must survive excursions to 175 °C under fault conditions.

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