75 V, 120 A switching — the TO-247 workhorse
The IRFP3077PBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET® line, built on a planar stripe trench technology. It delivers a continuous drain current of 120 A at 25 °C case temperature with a 75 V drain-source breakdown, all in a through-hole TO-247AC package. That 3.3 mOhm is the worst-case ceiling at 25 °C junction — expect it to climb with temperature per the normalized curve. Gate drive requirement is explicit: the 4 V maximum threshold at 250 µA means a 10 V gate signal is needed to fully enhance the channel.
Switching loss and driver budget
Total gate charge is 220 nC at 10 V. Input capacitance Ciss is 9400 pF at 50 V Vds.
Thermal design: the TO-247 tab matters
Maximum power dissipation is 340 W at case temperature 25 °C. That number is only achievable with the TO-247AC tab bolted to an infinite heatsink — real-world designs derate from that ceiling. The junction-to-case thermal path is through the metal tab; a thermal pad or grease plus a screw mount is mandatory for any load above a few tens of watts. The 175 °C ceiling suits under-hood automotive, industrial motor drives, and high-ambient enclosures.
Packaging is tube (the TO-247 leads are too large for tape-and-reel).