IRFP2907PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRFP2907PBF, N-Channel MOSFET, 75 V Vdss, 209 A Id, 4.5 mOhm Rds(on) at 125 A, 620 nC gate charge, TO-247AC through-hole package.

Infineon Technologies IRFP2907PBF
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Technical specifications

IRFP2907PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C209A (Tc)
Power dissipation470W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.5mOhm @ 125A, 10V
Gate charge (Qg) (Max) @ vgs620 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13000 pF @ 25 V

Technical details

Gate drive budget — 620 nC

Total gate charge is 620 nC at 10 V Vgs. At 20 kHz switching, the average gate current is 12.4 mA; the peak current from the driver must be higher to charge the gate within the switching dead-time.

Thermal budget — 470 W dissipation ceiling

The TO-247AC package's large tab area lets the designer mount to a heatsink with a low thermal resistance path — the 175 °C junction limit means the thermal impedance of the mounting interface, not the silicon, will set the practical current derating above 25 °C.

IRFP2907PBF
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