200 V, 30 A N-channel — what the TO-247AC carries
The IRFP250NPBF is an N-channel enhancement-mode MOSFET from Infineon's HEXFET series, housed in a TO-247AC through-hole package. This is a general-purpose power switch for DC-DC converters, motor drives, battery management, and uninterruptible power supplies where the bus voltage stays under 160 V to leave derating margin on the 200 V rating.
At 30 A the I²R loss hits 67.5 W — that number lands squarely on the heatsink designer's desk, not the schematic. Gate charge totals 123 nC at 10 V. Driving this at 100 kHz means the gate driver must source 12.3 mA average current; the switching loss in the crossover region becomes the dominant term above about 50 kHz, so this part is happier in the 20–50 kHz sweet spot for hard-switched topologies. Input capacitance is 2159 pF at 25 V drain-source — a moderate number that keeps the gate drive simple with a standard totem-pole driver, no need for a dedicated high-current booster below 50 kHz.
Thermal headroom — 175 °C junction buys margin
The maximum junction temperature is rated at 175 °C, 25 °C above the more common 150 °C limit. In a 214 W power dissipation package, that extra headroom allows a smaller heatsink or higher ambient operation before the thermal foldback kicks in.