200 V, 30 A N-channel HEXFET in TO-247AC
The 75 mOhm maximum on-resistance at 18 A with 10 V gate drive sets the conduction-loss floor for a primary-side switch or DC-DC converter stage. Housed in a TO-247AC through-hole package, this part is designed for power circuits where the board needs a heatsink-mounted device with low thermal resistance to the case. The 214 W power dissipation rating at the case temperature confirms it is a high-current, high-voltage switch, not a logic-level or low-power part.
Gate drive and switching budget
At a 100 kHz switching frequency, the average gate-drive current is 12.3 mA; the driver must supply that plus the peak current needed to charge the input capacitance (2159 pF at 25 V Vds) within the desired rise time. The 4 V maximum gate threshold at 250 µA drain current means this is a standard-threshold MOSFET, not a logic-level type. A 5 V logic output will not fully enhance it; the drive voltage should be 10 V to achieve the rated Rds(on).
Temperature range and storage notes
The 175 °C ceiling gives thermal headroom for fault conditions or high-ripple-current operation. The part ships in a tube (the listed package form). Store the reels dry — the TO-247AC body is not moisture-sensitive in the same way as a surface-mount package, but the leads are solderable tin and should be kept in a clean, low-humidity environment to avoid oxidation before wave or hand soldering.