100 V, 42 A N-channel HEXFET in a TO-247AC can
The IRFP150MPBF is an N-channel power MOSFET from the HEXFET® family, rated for 100 V drain-source breakdown and 42 A continuous drain current at 25 °C case temperature. Housed in a TO-247AC through-hole package, it carries a 36 mOhm maximum on-resistance when driven with 10 V on the gate — the drive voltage for the lowest Rds(on). The 110 nC gate charge at 10 V gives a rough idea of the switching energy; a gate driver that can source and sink a couple of amps will keep transition times short in a hard-switched converter.
Package and mounting
The 160 W maximum power dissipation is specified at a 25 °C case temperature. The junction temperature range of -55 to 175 °C covers industrial environments.
Gate drive and switching numbers
Gate threshold is 4 V maximum at 250 µA drain current. The 1900 pF input capacitance at 25 V drain-source is moderate.
Lifecycle and sourcing
The IRFP150MPBF carries an Active product status — no last-time-buy notice, no NRND flag. For BOM planning, that means no urgent replacement search needed. If you are qualifying a second source, look at other 100 V, TO-247AC N-channel MOSFETs with similar Rds(on) and gate charge; the IRFP150MPBF is a mature part, so pin-compatible alternatives exist from multiple vendors, but the exact Rds(on) and Qg trade-offs need a datasheet comparison.