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Infineon Technologies IRFP064NPBF

IRFP064NPBF HEXFET N-Channel MOSFET, 55V 110A TO-247AC

MPNIRFP064NPBF
End of Life

Infineon HEXFET IRFP064NPBF, N-Channel MOSFET, 55 V Vdss, 110 A continuous drain, 8 mOhm Rds(on) at 59 A, 170 nC gate charge, TO-247-3 through-hole package, -55°C to 175°C junction temperature.

$3.12Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFP064NPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 59A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4000 pF @ 25 V

Product details

55 V N-channel HEXFET in TO-247AC

It comes in a through-hole TO-247-3 package (supplier device package TO-247AC) and is specified for the full -55°C to 175°C junction temperature range.

On-resistance and gate drive budget

Maximum Rds(on) is 8 mOhm at 59 A drain current with 10 V gate drive. That 8 mOhm figure is the conduction loss floor at 25 °C junction — expect it to roughly double at 175 °C junction, which is the real operating resistance for a hot board. The 170 nC total gate charge at Vgs=10 V means the gate driver must supply 8.5 mA average current to switch at 50 kHz; a 100 kHz switching frequency pushes that to 17 mA. The 4000 pF input capacitance at Vds=25 V gives a first-order estimate of the switching energy per cycle.

Package and thermal handling

The TO-247AC package has a large metal tab that carries the drain potential — the tab is the primary heat path. Maximum power dissipation is 200 W at case temperature, but the real limit is keeping the junction under 175 °C. The through-hole mounting means the part can be reworked with a soldering iron or hot-air station; the three leads are on 0.170-inch pitch, easy to desolder without lifting pads.

Frequently asked questions

What is the Rds(on) of IRFP064NPBF?

Maximum Rds(on) is 8 mOhm at 59 A drain current with 10 V gate drive, specified at 25 °C junction temperature.

What is the gate charge of IRFP064NPBF?

Total gate charge (Qg) is 170 nC maximum at Vgs=10 V.