IRFP064NPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRFP064NPBF, N-Channel MOSFET, 55 V Vdss, 110 A continuous drain, 8 mOhm Rds(on) at 59 A, 170 nC gate charge, TO-247-3 through-hole package, -55°C to 175°C junction temperature.

Infineon Technologies IRFP064NPBF
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Technical specifications

IRFP064NPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation200W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs8mOhm @ 59A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4000 pF @ 25 V

Technical details

55 V N-channel HEXFET in TO-247AC

On-resistance and gate drive budget

That 8 mOhm figure is the conduction loss floor at 25 °C junction — expect it to roughly double at 175 °C junction, which is the real operating resistance for a hot board. The 170 nC total gate charge at Vgs=10 V means the gate driver must supply 8.5 mA average current to switch at 50 kHz; a 100 kHz switching frequency pushes that to 17 mA. The 4000 pF input capacitance at Vds=25 V gives a first-order estimate of the switching energy per cycle.

The TO-247AC package has a large metal tab that carries the drain potential — the tab is the primary heat path. Maximum power dissipation is 200 W at case temperature, but the real limit is keeping the junction under 175 °C. The through-hole mounting means the part can be reworked with a soldering iron or hot-air station; the three leads are on 0.170-inch pitch, easy to desolder without lifting pads.

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