IRFML8244TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET series, IRFML8244TRPBF, N-Channel MOSFET, 25 V Vdss, 5.8 A Id, 24 mOhm Rds(on) @ 5.8 A, 10 V, SOT-23 package, -55°C to 150°C.

Infineon Technologies IRFML8244TRPBF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFML8244TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.8A (Ta)
Power dissipation1.25W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.35V @ 10µA
Rds on (Max) @ id, vgs24mOhm @ 5.8A, 10V
Gate charge (Qg) (Max) @ vgs5.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds430 pF @ 10 V

Technical details

5.4 nC gate charge — fast switching without a big driver

Total gate charge is 5.4 nC at 10 V. The 430 pF input capacitance at 10 V drain-source confirms the light load on the drive circuit.

That covers avionics bay, outdoor telecom cabinet, and engine-compartment environments. Power dissipation is limited to 1.25 W at 25°C ambient in the SOT-23 — derate above that, and keep the copper pad area generous on the PCB.

SOT-23 — reworkable, but watch the thermal pad

The SOT-23 package (TO-236 / SC-59 variant) is a three-lead surface-mount part. It reworks cleanly under hot air — the small body heats fast, and the leads are on the long sides so alignment is straightforward. No hidden thermal pad underneath, so the board copper is what pulls heat away.

IRFML8244TRPBF
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