Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFL4315TRPBF, N-Channel MOSFET, 150 Vdss, 2.6 A continuous drain, 185 mOhm Rds(on) at 10 V, 19 nC gate charge, SOT-223 package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 2.6A (Ta) |
| Power dissipation | 2.8W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 185mOhm @ 1.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 420 pF @ 25 V |
Gate charge totals 19 nC at 10 V, which keeps the gate-drive current modest: at 100 kHz switching, the average drive current is about 1.9 mA, well within the capability of a small driver IC or a microcontroller output with a series resistor.
The 150 V drain-source rating suits 48 V telecom rectifiers, 72 V battery systems, and 100 V bus architectures where the MOSFET must survive load-dump transients without avalanche failure.
