IRFL4310TRPBF, HEXFET® N-Channel MOSFET, 100 V Vdss, 1.6 A Id, 200 mOhm Rds(on) at 10 V, SOT-223 surface mount, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1.6A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 200mOhm @ 1.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 330 pF @ 25 V |
At that operating point the conduction loss is 0.5 W, which sits inside the 1 W package dissipation limit at 25°C ambient. The gate charge is 25 nC at 10 V — a modest load that a standard gate driver or a microcontroller GPIO with a series resistor can handle without excessive switching loss at moderate frequencies.
The 150°C ceiling also provides headroom for self-heating in a confined enclosure.
Design engineers need to verify PCB layout compatibility before integrating the MOSFET.
Sourcing buyers need to find reliable distributors with stock and competitive pricing.
Buyers compare prices across suppliers to optimize BOM cost.
Lifecycle status ensures long-term availability and avoids redesign.
Engineers need drop-in replacements if the part is unavailable or for second sourcing.
Technical validation requires full datasheet specs to ensure fit in the circuit.