Infineon Technologies · HEXFET® Series
IRFL4310TRPBF, HEXFET® N-Channel MOSFET, 100 V Vdss, 1.6 A Id, 200 mOhm Rds(on) at 10 V, SOT-223 surface mount, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1.6A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 200mOhm @ 1.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 330 pF @ 25 V |
At that operating point the conduction loss is 0.5 W, which sits inside the 1 W package dissipation limit at 25°C ambient. The gate charge is 25 nC at 10 V — a modest load that a standard gate driver or a microcontroller GPIO with a series resistor can handle without excessive switching loss at moderate frequencies.
The 150°C ceiling also provides headroom for self-heating in a confined enclosure.
