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Infineon Technologies IRFL4105TRPBF

IRFL4105TRPBF N-Channel MOSFET, 55V 3.7A SOT-223

MPNIRFL4105TRPBF
End of Life

IRFL4105TRPBF, HEXFET® series, N-Channel MOSFET, 55V Vdss, 3.7A Id, 45mOhm Rds(on) @ 10V, SOT-223, -55°C to 150°C.

$0.93Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFL4105TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.7A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 3.7A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds660 pF @ 25 V

Product details

55 V, 3.7 A N-channel in a SOT-223 — what this part is for

The IRFL4105TRPBF is an N-channel enhancement-mode MOSFET from the HEXFET series, rated for 55 V drain-to-source and 3.7 A continuous drain current at 25°C. It comes in a surface-mount SOT-223 package (TO-261-4), which keeps the board footprint small for low-to-moderate power switching. The 45 mOhm maximum on-resistance at 10 V gate drive is the headline number for conduction loss — at 3.7 A that's about half a watt of dissipation, within the 1 W package limit. Typical applications include load switches, DC-DC converter input stages, and low-side switching in industrial control boards where board space is tight and the rail stays under 55 V.

Package and mounting

The 45 mOhm Rds(on) is specified at 10 V gate drive and 3.7 A drain current. That's the standard 10 V drive level for logic-level gate thresholds — the part's Vgs(th) max is 4 V at 250 µA, so 10 V gives you a solid overdrive. The 35 nC gate charge at 10 V is moderate; a typical gate driver with 1 A peak output can switch it in a few hundred nanoseconds. Input capacitance is 660 pF at 25 V Vds, which is low enough that a microcontroller GPIO through a series resistor can drive it for low-frequency switching, though a dedicated driver cleans up the edges for higher-frequency PWM.

Temperature range and environment

Junction temperature range is -55°C to 150°C, covering industrial and some automotive under-hood environments. The 1 W power dissipation at 25°C ambient is the package limit in free air; derating is needed above that. In a forced-air or heatsinked layout, the SOT-223 can handle more, but the 1 W number is the conservative design-in figure. ROHS3 compliant, no lead or restricted substances.

Active lifecycle — no LTB concern

The IRFL4105TRPBF is listed as Active in production. No last-time-buy or end-of-life notices are in the record. The part is ROHS3 compliant. For BOM planning, this means no near-term obsolescence risk — it's a standard catalog MOSFET that's been in the channel for years and should remain available through normal distribution.

Frequently asked questions

Is IRFL4105TRPBF obsolete or active?

It is Active in production — no discontinuation or last-time-buy has been announced.

What is the RDS(on) of IRFL4105TRPBF at 10V?

45 mOhm maximum at 10 V gate drive with 3.7 A drain current.

What is the maximum drain current and voltage rating of IRFL4105TRPBF?

55 V drain-to-source voltage, 3.7 A continuous drain current at 25°C.

Is IRFL4105TRPBF RoHS compliant?

Yes, it is ROHS3 compliant.