IRFL024ZTRPBF

Infineon Technologies · HEXFET® Series

Infineon IRFL024ZTRPBF HEXFET N-Channel MOSFET, 55 V drain-source, 5.1 A continuous drain, 57.5 mOhm Rds(on) at 10 V, SOT-223 surface-mount package, -55°C to 150°C operating junction temperature.

Infineon Technologies IRFL024ZTRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFL024ZTRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.1A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs57.5mOhm @ 3.1A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds340 pF @ 25 V

Technical details

Gate charge and drive budget

Total gate charge is 14 nC at 10 Vgs. For a 100 kHz switching frequency, the gate driver must supply 1.4 mA average current; at 500 kHz that rises to 7 mA, still within the capability of a standard low-side driver.

Thermal limit in the SOT-223 footprint

Maximum power dissipation is 1 W at 25°C ambient, derated to zero at 150°C junction. The SOT-223 package relies on the PCB copper pad area under the tab for heat spreading — a 1-oz copper pour of at least 300 mm² keeps the junction below 125°C at 0.8 W continuous.

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