IRFL024NTRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® N-Channel MOSFET, IRFL024NTRPBF, 55 V Vdss, 2.8 A Id, 75 mOhm Rds(on) @ 10 V, SOT-223, -55 to 150 °C.

Infineon Technologies IRFL024NTRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFL024NTRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.8A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs75mOhm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs18.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 25 V

Technical details

IRFL024NTRPBF
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