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Infineon Technologies IRFL014NTRPBF

IRFL014NTRPBF MOSFET, N-Channel 55V 1.9A SOT-223, Active

MPNIRFL014NTRPBF
End of Life

Infineon HEXFET IRFL014NTRPBF, N-Channel MOSFET, 55 V Vdss, 1.9 A Id, 160 mOhm Rds(on) at 10 V, SOT-223, -55 to 150 °C.

$0.75Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFL014NTRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.9A (Ta)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 1.9A, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds190 pF @ 25 V

Product details

At 1.9 A and 160 mOhm, the conduction loss is about 580 mW — within the 1 W power dissipation limit at 25 °C ambient, but the SOT-223's thermal resistance means the PCB copper area under the tab sets the real current ceiling. The 11 nC total gate charge at 10 V means a small gate-driver IC or even a GPIO with a series resistor can switch it at tens of kHz without excessive drive current. Input capacitance is 190 pF at 25 V Vds — low enough that switching losses stay modest up to a few hundred kHz, but the 1 W dissipation limit in free air will be the binding constraint before the gate charge becomes one.

SOT-223 footprint — layout and thermal reality

Operating junction temperature range is -55 to 150 °C, so it handles automotive under-hood ambient and industrial enclosures without derating the voltage or current ratings at the high end.

Frequently asked questions

Can IRFL014NTRPBF be used as a switch?

Yes — it is an N-channel enhancement-mode MOSFET designed for low-side switching. The 55 V Vdss and 1.9 A Id rating suit it for switching 12 V, 24 V, or 48 V loads like relays, solenoids, and DC-DC converter primary-side switches.

What is the equivalent of IRFL014NTRPBF?

The IPD50R950CEAUMA1 is a different-tier 500 V CoolMOS part and is not a functional replacement for this 55 V SOT-223 device.