Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFL014NTRPBF, N-Channel MOSFET, 55 V Vdss, 1.9 A Id, 160 mOhm Rds(on) at 10 V, SOT-223, -55 to 150 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1.9A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 160mOhm @ 1.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 190 pF @ 25 V |
At 1.9 A and 160 mOhm, the conduction loss is about 580 mW — within the 1 W power dissipation limit at 25 °C ambient, but the SOT-223's thermal resistance means the PCB copper area under the tab sets the real current ceiling.
Operating junction temperature range is -55 to 150 °C, so it handles automotive under-hood ambient and industrial enclosures without derating the voltage or current ratings at the high end.
