IRFI4410ZPBF

Infineon Technologies · HEXFET® Series

IRFI4410ZPBF, Infineon HEXFET series, N-Channel MOSFET, 100V Vdss, 43A Id, 9.3mOhm Rds(on) @ 10V, 110nC Qg, TO-220-3 Full Pack, -55°C to 175°C.

Infineon Technologies IRFI4410ZPBF
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Technical specifications

IRFI4410ZPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation47W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs9.3mOhm @ 26A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4910 pF @ 50 V

Technical details

Package and mounting — no insulator needed

Through-hole leads suit wave-solder or hand-assembly. The full-pack construction adds thermal resistance compared to a standard TO-220 — the 47W power dissipation limit at case temperature reflects that. Keep the case temperature down if you plan to pull near the 43A rating.

The 175°C Tj(max) gives headroom for short-term overloads, but continuous operation near that limit will reduce lifetime — derate the current per the thermal curve in the datasheet.

The 10V drive voltage is specified for achieving the minimum Rds(on); the maximum Vgs is ±30V, so a standard 12V gate drive rail is fine. Input capacitance is 4910pF at 50V drain-source, which together with the 110nC gate charge means the gate driver must supply that charge each cycle. For switching frequencies above 100kHz, the gate-drive losses become significant — factor that into the driver's power budget.

ROHS3 compliant.

IRFI4410ZPBF
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