200 V N-channel HEXFET in a fully isolated TO-220
The Infineon IRFI4227PBF is an N-channel enhancement-mode MOSFET from the HEXFET® series, rated for 200 V drain-to-source voltage and 26 A continuous drain current at 25 °C case temperature. Its key feature is the TO-220 Full-Pak (fully isolated tab) package, which eliminates the need for an insulating washer between the device and heatsink — a timesaver in through-hole power layouts. Typical applications include DC-DC converters, motor drives, power supplies, and battery management circuits where 200 V blocking and moderate current are required, across industrial and telecom environments.
110 nC gate charge — sizing the gate driver
Gate charge is 110 nC at 10 V. Input capacitance is 4600 pF at 25 V.
Full-Pak package — no isolator needed
The TO-220 Full-Pak (also called TO-220AB Full-Pak) moulds the plastic body around the entire tab, so the mounting surface is electrically isolated from the drain. This means the device can be bolted directly to a grounded heatsink or chassis without an insulating pad and washer. The through-hole mounting is standard for point-to-point wiring or PCB mounting where a single screw holds the device. The -40 °C to 150 °C junction temperature range covers industrial and outdoor telecom enclosures.
Active lifecycle — no near-term obsolescence risk
The IRFI4227PBF has Active product status and ROHS3 compliance.