IRFI4110GPBF

Infineon Technologies · HEXFET® Series

MOSFET N-CH 100V 72A TO220AB FP

Infineon Technologies IRFI4110GPBF
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Technical specifications

IRFI4110GPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C72A (Tc)
Power dissipation61W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs4.5mOhm @ 43A, 10V
Gate charge (Qg) (Max) @ vgs290 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9540 pF @ 50 V
IRFI4110GPBF
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