Infineon Technologies · HEXFET® Series
Infineon HEXFET® series, IRFI3205PBF, N-Channel MOSFET, 55 V Vdss, 64 A Id, 8 mOhm Rds(on) at 10 V, 170 nC Qg, TO-220-3 Full Pack, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 64A (Tc) |
| Power dissipation | 63W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 8mOhm @ 34A, 10V |
| Gate charge (Qg) (Max) @ vgs | 170 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4000 pF @ 25 V |
The IRFI3205PBF: The full-pack TO-220 isolates the tab electrically, so no insulating pad is needed — useful when multiple devices share a heatsink.
Total gate charge is 170 nC at 10 V.
The 175 °C Tj(max) also provides headroom for transient overloads in motor-drive or DC-DC converter applications.
