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Infineon Technologies IRFI1310NPBF

IRFI1310NPBF N-Channel MOSFET, 100 V, 24 A, TO-220 Full Pack

MPNIRFI1310NPBF
End of Life

Infineon HEXFET® series, IRFI1310NPBF, N-Channel MOSFET, 100 V drain-source, 24 A continuous drain, 36 mOhm Rds(on) at 10 V gate drive, 120 nC gate charge, TO-220AB Full-Pak package, -55°C to 175°C junction temperature.

$1.82Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFI1310NPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation56W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs36mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 25 V

Product details

The TO-220AB Full-Pak (isolated tab) package eliminates the need for a mica insulator and thermal grease in chassis-mount designs — the back of the package is electrically isolated, so you can bolt it directly to a grounded heatsink without an isolation pad. The through-hole mounting suits point-to-point wiring and high-vibration environments where a soldered SMT part might crack the joint.

Gate drive and switching — 120 nC total gate charge

Total gate charge is 120 nC at 10 V gate drive. A gate driver sourcing 1 A peak can turn the FET on in about 120 ns — fast enough for a 50–100 kHz hard-switched converter. The 1900 pF input capacitance at 25 V drain-source gives the driver a capacitive load to charge each cycle; match the driver's peak current to the switching frequency to avoid excessive cross-conduction. Gate threshold voltage is 4 V maximum at 250 µA drain current. The recommended drive voltage for minimum Rds(on) is 10 V — a standard 12 V gate-drive rail is sufficient. The ±20 V maximum gate-source rating provides margin for ringing on long gate traces, but a 10 V zener clamp across G-S is still good practice in noisy environments.

Temperature range and application environment

This makes the part suitable for avionics power supplies, downhole instrumentation, satellite payloads, and outdoor industrial drives where ambient temperatures can exceed 85°C. The 175°C maximum junction allows a higher thermal headroom than a 150°C-rated part, which translates into a smaller heatsink for the same power dissipation.

Lifecycle and sourcing position

The TO-220 Full Pack package is a mature, widely stocked form factor, so lead times are generally stable for production quantities.

Frequently asked questions

What is the datasheet for IRFI1310NPBF?

Engineers need the datasheet to validate electrical specs and pin compatibility for their design.

Where can I buy IRFI1310NPBF?

Buyers need to find authorized distributors to procure the part for production or repair.

Is IRFI1310NPBF in stock?

Real-time stock availability impacts lead time and the ability to meet production schedules.

What is the price of IRFI1310NPBF?

Pricing directly affects BOM cost and budget planning for sourcing buyers.

What is the equivalent or replacement for IRFI1310NPBF?

Engineers and maintenance techs need alternatives when the part is unavailable or for obsolescence planning.

What is the pinout of IRFI1310NPBF?

Design engineers and repair techs need correct pin mapping to avoid board layout errors.