IRFI1310NPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® series, IRFI1310NPBF, N-Channel MOSFET, 100 V drain-source, 24 A continuous drain, 36 mOhm Rds(on) at 10 V gate drive, 120 nC gate charge, TO-220AB Full-Pak package, -55°C to 175°C junction temperature.

Infineon Technologies IRFI1310NPBF
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[IN STOCK] In Stock: 41 pcs
$3.42/ pc

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Technical specifications

IRFI1310NPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation56W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs36mOhm @ 13A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 25 V

Technical details

The through-hole mounting suits point-to-point wiring and high-vibration environments where a soldered SMT part might crack the joint.

Gate drive and switching — 120 nC total gate charge

A gate driver sourcing 1 A peak can turn the FET on in about 120 ns — fast enough for a 50–100 kHz hard-switched converter.

Temperature range and application environment

This makes the part suitable for avionics power supplies, downhole instrumentation, satellite payloads, and outdoor industrial drives where ambient temperatures can exceed 85°C. The 175°C maximum junction allows a higher thermal headroom than a 150°C-rated part, which translates into a smaller heatsink for the same power dissipation.

The TO-220 Full Pack package is a mature, widely stocked form factor, so lead times are generally stable for production quantities.

IRFI1310NPBF
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