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Infineon Technologies IRFHS9351TRPBF

IRFHS9351TRPBF Dual P-Channel MOSFET, 30V 2.3A, PQFN-6

MPNIRFHS9351TRPBF
End of Life

Infineon HEXFET® IRFHS9351TRPBF, dual P-Channel MOSFET, 30V Vdss, 2.3A Id, 170mOhm Rds(on) at 10V, logic-level gate, -55°C to 150°C, 6-PQFN (2x2) surface mount.

$0.81Ref. price · indicative, final on quote
Packaging6-VQFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFHS9351TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET type2 P-Channel (Dual)
Mounting typeSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C2.3A
Power - max1.4W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-VQFN Exposed Pad
Vgs(th) (Max) @ id2.4V @ 10µA
Rds on (Max) @ id, vgs170mOhm @ 3.1A, 10V
Gate charge (Qg) (Max) @ vgs3.7nC @ 10V
Input capacitance (Ciss) (Max) @ vds160pF @ 25V

Product details

Reworking the 6-PQFN: what to watch

The 2x2 mm PQFN with an exposed pad is a compact package, but its small size and fine pitch mean the thermal pad under the part must be well-soldered to the PCB copper pour for both heat sinking and electrical drain connection. Under a hot-air station, preheat the board to 100–120 °C to avoid warping the small package; use a fine tip and tack one corner first to confirm alignment — the exposed pad is the main heat path, and a cold joint there will cook the part under load.

Frequently asked questions

Is IRFHS9351TRPBF RoHS compliant?

Yes, the IRFHS9351TRPBF is ROHS3 compliant per the manufacturer's listing.