Infineon HEXFET® IRFHS9351TRPBF, dual P-Channel MOSFET, 30V Vdss, 2.3A Id, 170mOhm Rds(on) at 10V, logic-level gate, -55°C to 150°C, 6-PQFN (2x2) surface mount.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | 2 P-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 2.3A |
| Power - max | 1.4W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 6-VQFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.4V @ 10µA |
| Rds on (Max) @ id, vgs | 170mOhm @ 3.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 3.7nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 160pF @ 25V |
The 2x2 mm PQFN with an exposed pad is a compact package, but its small size and fine pitch mean the thermal pad under the part must be well-soldered to the PCB copper pour for both heat sinking and electrical drain connection.
Yes, the IRFHS9351TRPBF is ROHS3 compliant per the manufacturer's listing.