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Infineon Technologies IRFHS9301TRPBF

IRFHS9301TRPBF P-Channel MOSFET, 30V, 37mOhm, 6-PQFN

MPNIRFHS9301TRPBF
End of Life

Infineon HEXFET P-Channel MOSFET, 30V drain-source, 6A (Ta) / 13A (Tc) continuous drain, 37mOhm Rds(on) at 7.8A, 10V gate drive, 6-PowerVDFN (2x2) package.

$0.74Ref. price · indicative, final on quote
Packaging6-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFHS9301TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6A (Ta), 13A (Tc)
Power dissipation2.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-PowerVDFN
Vgs(th) (Max) @ id2.4V @ 25µA
Rds on (Max) @ id, vgs37mOhm @ 7.8A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds580 pF @ 25 V

Product details

P-channel in a 2x2 mm footprint

The IRFHS9301TRPBF is a 30 V P-channel HEXFET MOSFET in a 6-PQFN (2x2) (DFN2020) package — a 2 mm square body that fits tight load-switch or DC-DC converter layouts where board area is the constraint, not the current budget. Rds(on) is specified at 37 mOhm max with a 7.8 A drain current and 10 V gate drive; the same device also lists a 4.5 V drive option for lower-voltage logic rails, though the on-resistance will rise from the 37 mOhm figure.

Current rating: ambient vs case

Continuous drain current is rated 6 A at 25°C ambient (Ta) and 13 A at 25°C case (Tc) — the 2.1 W power dissipation at Ta is the practical limit for a 2x2 mm package without a heatsink. The 6 A figure assumes standard FR-4 with 1 oz copper; the 13 A figure needs the exposed pad soldered to a larger copper island on the PCB.

Gate charge and switching

Total gate charge is 13 nC at Vgs=10 V, with 580 pF input capacitance at Vds=25 V. For a 500 kHz switching regulator the gate drive current requirement is modest — roughly 6.5 mA average — but the 4.5 V drive threshold means a 5 V logic rail can turn it on fully; 3.3 V logic will need a level shifter or a driver.

Temperature range and qualification

Junction temperature range is -55°C to 150°C, covering industrial and some automotive under-hood environments, though no AEC-Q grade is listed on this variant.

Frequently asked questions

What is the Rds(on) of IRFHS9301TRPBF?

Maximum on-resistance is 37 mOhm at a drain current of 7.8 A and Vgs=10 V.

Is IRFHS9301TRPBF RoHS compliant?

Yes, it is ROHS3 compliant.