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Infineon Technologies IRFHS8342TRPBF
Infineon Technologies

IRFHS8342TRPBF Infineon N-Channel MOSFET, 30 V, 16 mOhm

MPNIRFHS8342TRPBF
End of Life

Infineon HEXFET® IRFHS8342TRPBF, N-Channel MOSFET, 30 V Vdss, 8.8 A (Ta) / 19 A (Tc) continuous drain, 16 mOhm Rds(on) max at 10 V, PG-TSDSON-6 package, -55 to 150 °C junction.

$0.59Ref. price · indicative, final on quote
IRFHS8342TRPBF datasheet
Packaging6-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFHS8342TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8.8A (Ta), 19A (Tc)
Power dissipation2.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-PowerVDFN
Vgs(th) (Max) @ id2.35V @ 25µA
Rds on (Max) @ id, vgs16mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs8.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds600 pF @ 25 V

Product details

30 V N-channel for low-voltage power switching

The Infineon IRFHS8342TRPBF is a 30 V N-channel HEXFET® MOSFET in a PG-TSDSON-6 package, rated for continuous drain current of 8.8 A at 25 °C ambient (Ta) and 19 A at case temperature (Tc). The 16 mOhm max Rds(on) at 10 V gate drive sets the conduction loss floor for a 24 V or lower rail — at 8.5 A the dissipation is under 1.2 W, well within the 2.1 W package limit at ambient.

Rds(on) and gate drive — sizing the driver

Rds(on) is specified at 16 mOhm max with Vgs = 10 V and Id = 8.5 A. Total gate charge is 8.7 nC at 10 V.

PG-TSDSON-6 — rework and footprint

The 6-lead PowerVDFN (PG-TSDSON-6) has an exposed paddle on the bottom. The paddle is the main thermal path — the datasheet recommends a copper pad on the PCB with thermal vias to the inner ground plane. Reflow profile follows standard lead-free.

Frequently asked questions

What is the Rds(on) of IRFHS8342TRPBF?

Maximum Rds(on) is 16 mOhm at Vgs = 10 V and Id = 8.5 A.

What package does IRFHS8342TRPBF use?

The IRFHS8342TRPBF is supplied in a 6-lead PowerVDFN package, designated PG-TSDSON-6 by Infineon.