IRFHS8242TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-Channel MOSFET, 25 V Vdss, 9.9 A (Ta) / 21 A (Tc) continuous drain, 13 mOhm Rds(on) at 8.5 A, 10 V, 10.4 nC gate charge, 6-PQFN (2x2) DFN2020 package, -55 to 150 °C junction.

Infineon Technologies IRFHS8242TRPBF
Download datasheet (PDF)
[IN STOCK] In Stock: 4 pcs
$1.73/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFHS8242TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9.9A (Ta), 21A (Tc)
Power dissipation2.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-PowerVDFN
Vgs(th) (Max) @ id2.35V @ 25µA
Rds on (Max) @ id, vgs13mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs10.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds653 pF @ 10 V

Technical details

IRFHS8242TRPBF
[ALLOC] verified
Quote