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Infineon Technologies IRFHM9331TRPBF

IRFHM9331TRPBF P-Channel MOSFET, 30V, 11A, PQFN 3x3

MPNIRFHM9331TRPBF
End of Life

Infineon HEXFET IRFHM9331TRPBF, P-Channel MOSFET, 30V Vdss, 11A (Ta) / 24A (Tc) continuous drain, 10mOhm Rds(on) at 11A, 20V Vgs, PQFN 3x3 package, -55°C to 150°C.

$0.8Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFHM9331TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V, 20V
Current - continuous drain (Id) @ 25°C11A (Ta), 24A (Tc)
Power dissipation2.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.4V @ 25µA
Rds on (Max) @ id, vgs10mOhm @ 11A, 20V
Gate charge (Qg) (Max) @ vgs48 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1543 pF @ 25 V

Product details

Gate charge and switching speed

Total gate charge is 48 nC at 10 V — a moderate figure that lets a standard gate driver (e.g., 1 A peak) switch the FET in under 100 ns. The input capacitance of 1543 pF at 25 V drain bias is low enough that the driver's output impedance, not the Miller plateau, sets the turn-on edge in most 100–500 kHz converters.

Thermal and package reality

The 8-PowerTDFN (PQFN 3x3) package dissipates 2.8 W at 25 °C ambient when the exposed paddle is soldered to a copper land on the PCB — without that thermal connection the RthJA rises sharply, and the 11 A rating becomes thermally limited long before the silicon hits its 150 °C junction limit. The ±25 V maximum gate rating gives headroom for 12 V or 15 V gate drives without a zener clamp.

Frequently asked questions

What is the replacement for IRFHM9331TRPBF?

No official successor or direct replacement is listed by Infineon. The peer IPD50R950CEAUMA1 is an N-channel CoolMOS device with a 500 V drain rating and 950 mOhm Rds(on) — it is not a functional substitute for this 30 V P-channel part. For a P-channel alternative, look within the same HEXFET family at the same voltage and current class.

What are the specifications of IRFHM9331TRPBF?

The IRFHM9331TRPBF is a P-channel MOSFET rated for 30 V drain-to-source, 11 A continuous drain at 25 °C ambient (24 A at case temperature), with 10 mOhm max on-resistance at 11 A and 20 V gate drive. Gate charge is 48 nC at 10 V, input capacitance is 1543 pF at 25 V drain bias, and the operating junction temperature range is -55 °C to 150 °C. It comes in an 8-PowerTDFN (PQFN 3x3) surface-mount package.