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Infineon Technologies IRFHM8326TRPBF
Infineon Technologies

IRFHM8326TRPBF HEXFET N-Ch 30V 19A PowerTDFN MOSFET

MPNIRFHM8326TRPBF
End of Life

Infineon HEXFET IRFHM8326TRPBF N-Channel MOSFET, 30 V Vdss, 19 A Id, 4.7 mOhm Rds(on) at 10 V, 39 nC Qg, 8-PowerTDFN, -55 to 150 °C.

$0.6Ref. price · indicative, final on quote
IRFHM8326TRPBF datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFHM8326TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C19A (Ta)
Power dissipation2.8W (Ta), 37W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 50µA
Rds on (Max) @ id, vgs4.7mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2496 pF @ 10 V

Product details

30 V N-channel in a PowerTDFN — load-switch and OR-ing candidate

The IRFHM8326TRPBF: Gate charge is 39 nC at 10 V. Input capacitance is 2496 pF at 10 V drain-source.

Rds(on) is 4.7 mOhm max at 20 A and 10 V. Power dissipation is 2.8 W at 25 °C ambient and 37 W at case temperature. At 4.5 V the on-resistance is higher than at 10 V. Maximum gate-source voltage is ±20 V. Gate threshold voltage is 2.2 V max at 50 µA drain current.

The operating junction temperature range is -55 °C to 150 °C, which covers automotive under-hood and industrial motor-drive environments. The 150 °C rating is the absolute junction limit — the board-level thermal design must keep the junction below that at full load.

Frequently asked questions

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