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Infineon Technologies IRFHM830TRPBF

IRFHM830TRPBF - Infineon Technologies

MPNIRFHM830TRPBF
End of Life

MOSFET N-CH 30V 21A/40A PQFN

$0.9Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFHM830TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C21A (Ta), 40A (Tc)
Power dissipation2.7W (Ta), 37W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.35V @ 50µA
Rds on (Max) @ id, vgs3.8mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2155 pF @ 25 V