IRFH8318TRPBF

Infineon Technologies · HEXFET® Series

IRFH8318TRPBF, Infineon HEXFET N-Channel MOSFET, 30V Vdss, 27A (Ta) / 120A (Tc), 3.1mOhm Rds(on) @ 20A, 10V, 41nC Qg, PQFN 5x6, -55°C to 150°C.

Infineon Technologies IRFH8318TRPBF
Download datasheet (PDF)
[IN STOCK] In Stock: 1,970 pcs
$0.57/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFH8318TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C27A (Ta), 120A (Tc)
Power dissipation3.6W (Ta), 59W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.35V @ 50µA
Rds on (Max) @ id, vgs3.1mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3180 pF @ 10 V

Technical details

Temperature range and environment

Rated for -55°C to 150°C junction temperature, this FET fits automotive under-hood, industrial motor drives, and outdoor telecom power supplies. The 150 °C max junction means you can push the die hot in a sealed enclosure as long as the thermal resistance to ambient is low enough. The ±20 V maximum gate-source rating gives margin against gate ringing in a hard-switching bridge.

Lifecycle and compliance

ROHS3 compliant, so no substance-restriction issues for EU-market or medical equipment.

IRFH8318TRPBF
[ALLOC] verified
Quote