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Infineon Technologies IRFH8316TRPBF-IR — Discrete Semiconductors
Infineon Technologies

IRFH8316TRPBF-IR HEXFET N-Channel MOSFET, 30 V, 2.95 mOhm

MPNIRFH8316TRPBF-IR
Active

Infineon IRFH8316TRPBF-IR, HEXFET® N-Channel Power MOSFET, 30 V drain-source, 27 A switching current, 2.95 mOhm Rds(on) at 20 A, 10 V, 59 nC gate charge, -55 to 150 °C junction temperature.

$0.32Ref. price · indicative, final on quote
IRFH8316TRPBF-IR datasheet
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFH8316TRPBF-IR Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeSurface Mount
Operating temperature high-55°C to 150°C(TJ)
Vgs±20 V
Power_w3.6
Package_typeBulk
Capacitance_uf0.0036
Product_statusActive
Supply_voltage_v30.0
Vgs(Th) (Max) @ id2.2 V @ 50µA
Switching_current_a27.0
Rds on (Max) @ id, vgs2.95mOhm @ 20 A, 10 V
Gate charge (Qg) (Max) @ vgs59 nC @ 10 V

Product details

2.95 mOhm Rds(on) — the conduction loss floor

The IRFH8316TRPBF-IR is an Infineon HEXFET® N-channel power MOSFET rated for 30 V drain-source and 27 A switching current. For a 12 V bus load switch or a low-side synchronous rectifier, that on-resistance keeps the heatsink small or absent.

59 nC gate charge — what the driver sees

Gate charge totals 59 nC at 10 V Vgs. For a 100 kHz switching regulator, that translates to about 5.9 mA average gate drive current — easily handled by a standard MOSFET driver. The ±20 V Vgs rating gives headroom for gate-drive overshoot on a 12 V rail without avalanche stress on the oxide.

Junction temperature range and package

The 2.2 V maximum gate threshold at 50 µA drain current means the part turns on fully with 5 V logic, though the lowest Rds(on) requires the full 10 V drive.

Frequently asked questions

What is the exact Rds(on) of IRFH8316TRPBF-IR?

The maximum Rds(on) is 2.95 mOhm at 20 A drain current with a 10 V gate-source voltage. This is the worst-case value at 25 °C junction temperature; actual on-resistance rises with temperature per the normalised curve in the datasheet.

Does IRFH8316TRPBF-IR have a Pb-free finish?

The part number suffix 'TRPBF' indicates a Pb-free (RoHS-compliant) plating finish. The 'IR' suffix denotes Infineon's standard reel packaging.