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Infineon Technologies IRFH8311TRPBF

IRFH8311TRPBF MOSFET N-Ch 30V 32A PQFN5x6 HEXFET

MPNIRFH8311TRPBF
End of Life

Infineon HEXFET® IRFH8311TRPBF, N-Channel MOSFET, 30 V Vdss, 32 A (Ta) / 169 A (Tc) continuous drain, 2.1 mOhm Rds(on) at 20 A, 10 V, 66 nC gate charge, PQFN 5x6 mm, -55 to 150 °C.

$1.3Ref. price · indicative, final on quote
Infineon Technologies IRFH8311TRPBF datasheet (PDF)
Packaging8-TQFN Exposed Pad
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFH8311TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C32A (Ta), 169A (Tc)
Power dissipation3.6W (Ta), 96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-TQFN Exposed Pad
Vgs(th) (Max) @ id2.35V @ 100µA
Rds on (Max) @ id, vgs2.1mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs66 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4960 pF @ 10 V

Product details

30 V N-channel HEXFET in a 5x6 PQFN

The Infineon IRFH8311TRPBF is a 30 V N-channel MOSFET from the HEXFET® family, rated for a continuous drain current of 32 A (Ta) and 169 A (Tc) in the PQFN 5x6 mm package. It is a switching MOSFET aimed at DC-DC converters, load switches, and battery protection circuits in industrial and automotive-adjacent environments where the -55 to 150 °C junction temperature range covers cold-start and under-hood thermal cycling.

Active lifecycle — no LTB risk

No last-time-buy or end-of-life notices are on record. ROHS3 compliance is confirmed.

Frequently asked questions

What is the recommended gate drive voltage for IRFH8311TRPBF?

The drive voltage range is 4.5 V (minimum for rated Rds(on)) to 10 V (where the 2.1 mOhm maximum is specified). Use 10 V for the lowest conduction loss.

Is IRFH8311TRPBF RoHS compliant and lead-free?

Yes, it is ROHS3 Compliant.

Can IRFH8311TRPBF be used as a replacement for IRFH8310?

Both are 30 V N-channel HEXFETs in the same PQFN 5x6 footprint, but the IRFH8311 has a lower Rds(on) (2.1 mOhm vs the IRFH8310's higher value) and a higher current rating. Verify the gate charge and switching speed match your application before substituting.

What is the difference between IRFH8311TRPBF and IRFH8312?

Both are 30 V N-channel HEXFETs in the same package. The IRFH8311 has a 2.1 mOhm Rds(on) and 66 nC gate charge; the IRFH8312 typically has a slightly higher on-resistance. Check the respective datasheets for exact figures.