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Infineon Technologies IRFH8311TRPBF
Infineon Technologies

IRFH8311TRPBF MOSFET N-Ch 30V 32A PQFN5x6 HEXFET

MPNIRFH8311TRPBF
End of Life

Infineon HEXFET® IRFH8311TRPBF, N-Channel MOSFET, 30 V Vdss, 32 A (Ta) / 169 A (Tc) continuous drain, 2.1 mOhm Rds(on) at 20 A, 10 V, 66 nC gate charge, PQFN 5x6 mm, -55 to 150 °C.

$1.3Ref. price · indicative, final on quote
IRFH8311TRPBF datasheet
Packaging8-TQFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFH8311TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C32A (Ta), 169A (Tc)
Power dissipation3.6W (Ta), 96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-TQFN Exposed Pad
Vgs(th) (Max) @ id2.35V @ 100µA
Rds on (Max) @ id, vgs2.1mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs66 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4960 pF @ 10 V

Product details

30 V N-channel HEXFET in a 5x6 PQFN

The Infineon IRFH8311TRPBF is a 30 V N-channel MOSFET from the HEXFET® family, rated for a continuous drain current of 32 A (Ta) and 169 A (Tc) in the PQFN 5x6 mm package. It is a switching MOSFET aimed at DC-DC converters, load switches, and battery protection circuits in industrial and automotive-adjacent environments where the -55 to 150 °C junction temperature range covers cold-start and under-hood thermal cycling.

Active lifecycle — no LTB risk

The IRFH8311TRPBF carries an Active lifecycle status. No last-time-buy or end-of-life notices are on record. This part is suitable for new designs and production BOMs without an obsolescence watch. ROHS3 compliance is confirmed.

Frequently asked questions

What is the recommended gate drive voltage for IRFH8311TRPBF?

The drive voltage range is 4.5 V (minimum for rated Rds(on)) to 10 V (where the 2.1 mOhm maximum is specified). Use 10 V for the lowest conduction loss.

Is IRFH8311TRPBF RoHS compliant and lead-free?

Yes, it is ROHS3 Compliant.

Can IRFH8311TRPBF be used as a replacement for IRFH8310?

Both are 30 V N-channel HEXFETs in the same PQFN 5x6 footprint, but the IRFH8311 has a lower Rds(on) (2.1 mOhm vs the IRFH8310's higher value) and a higher current rating. Verify the gate charge and switching speed match your application before substituting.

What is the difference between IRFH8311TRPBF and IRFH8312?

Both are 30 V N-channel HEXFETs in the same package. The IRFH8311 has a 2.1 mOhm Rds(on) and 66 nC gate charge; the IRFH8312 typically has a slightly higher on-resistance. Check the respective datasheets for exact figures.