Infineon HEXFET®, StrongIRFET™ series N-Channel MOSFET, 25 V Vdss, 0.95 mOhm Rds(on) at 50 A, 10 V, 100 A continuous drain at Tc, 111 nC gate charge, 8-PowerTDFN package, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | HEXFET®, StrongIRFET™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 49A (Ta), 100A (Tc) |
| Power dissipation | 3.6W (Ta), 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.35V @ 150µA |
| Rds on (Max) @ id, vgs | 0.95mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 111 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7330 pF @ 13 V |
IRFH8201TRPBF N-Channel MOSFET, 25 V Vdss, 0.95 mOhm Rds(on) at 50 A, 10 V.
Continuous drain current is rated at 49 A at 25 °C ambient (Ta) and 100 A at case temperature (Tc), with a maximum power dissipation of 3.6 W at ambient and 156 W at the case.
The 111 nC Qg at 10 V sets the gate drive energy per switching cycle.
Buyers need lifecycle status to ensure long-term availability and avoid last-time buys or redesigns.
When the part is unavailable or EOL, engineers require a drop-in substitute to prevent board changes.
Sourcing buyers need immediate availability to meet production deadlines and avoid line stops.
Procurement teams compare pricing across distributors to optimize BOM cost and margins.
Design engineers verify the MOSFET meets Vds, current, Rds(on), and thermal requirements for their application.
Gate drive voltage directly affects Rds(on) and switching losses; engineers must confirm compatibility.