Infineon Technologies · HEXFET®, StrongIRFET™ Series
Infineon HEXFET®, StrongIRFET™ series N-Channel MOSFET, 25 V Vdss, 0.95 mOhm Rds(on) at 50 A, 10 V, 100 A continuous drain at Tc, 111 nC gate charge, 8-PowerTDFN package, -55°C to 150°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET®, StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 49A (Ta), 100A (Tc) |
| Power dissipation | 3.6W (Ta), 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.35V @ 150µA |
| Rds on (Max) @ id, vgs | 0.95mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 111 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7330 pF @ 13 V |
IRFH8201TRPBF N-Channel MOSFET, 25 V Vdss, 0.95 mOhm Rds(on) at 50 A, 10 V.
Continuous drain current is rated at 49 A at 25 °C ambient (Ta) and 100 A at case temperature (Tc), with a maximum power dissipation of 3.6 W at ambient and 156 W at the case.
The 111 nC Qg at 10 V sets the gate drive energy per switching cycle.
