IRFH7446TRPBF

Infineon Technologies · HEXFET®, StrongIRFET™ Series

Infineon HEXFET®, StrongIRFET™ series, IRFH7446TRPBF, N-Channel MOSFET, 40 V Vdss, 85 A Id, 3.3 mOhm Rds(on) max @ 50 A, 10 V, 98 nC Qg, 8-PQFN (5x6) surface mount, -55 to 150 °C.

Infineon Technologies IRFH7446TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFH7446TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C85A (Tc)
Power dissipation78W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-TQFN Exposed Pad
Vgs(th) (Max) @ id3.9V @ 100µA
Rds on (Max) @ id, vgs3.3mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs98 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3174 pF @ 25 V

Technical details

40 V N-channel in a 5x6 PQFN — the power-stage workhorse

The IRFH7446TRPBF is an Infineon N-channel MOSFET from the HEXFET and StrongIRFET series, rated for 40 V drain-source and 85 A continuous drain current at a 25 °C case temperature.

The 3.3 mOhm Rds(on) at 50 A and 10 V Vgs is the figure that sets the I²R conduction loss. At 50 A that is about 8.25 W of dissipation just from the channel, before switching losses are added. The 98 nC total gate charge at 10 V tells the BOM-cost engineer what gate-drive current is needed: at 100 kHz switching, the average gate current is 9.8 mA, well within a standard driver, but the peak current capability of the driver must still source that charge in the desired transition time.

Temperature range and application environments

The 40 V drain-source rating provides headroom on 12 V and 24 V industrial and automotive buses, absorbing load-dump transients without avalanche breakdown.

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