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Infineon Technologies IRFH6200TRPBF

IRFH6200TRPBF HEXFET N-Ch MOSFET, 20V, 0.95mOhm

MPNIRFH6200TRPBF
End of Life

IRFH6200TRPBF, HEXFET® series, N-Channel MOSFET, 20V Vdss, 0.95mOhm Rds(on) at 50A, 100A continuous drain, 8-PQFN (5x6) package, -55°C to 150°C junction temperature.

$2.37Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFH6200TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C49A (Ta), 100A (Tc)
Power dissipation3.6W (Ta), 156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id1.1V @ 150µA
Rds on (Max) @ id, vgs0.95mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs230 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds10890 pF @ 10 V

Product details

Low Rds(on) for high-current switching

That Rds(on) figure — specified at a high current — tells you the conduction loss stays low even under heavy load, which matters for synchronous rectification stages and low-voltage OR-ing diodes where every milliohm adds to the thermal budget.

Gate charge and drive voltage

Total gate charge is 230 nC at 4.5 V, with a maximum gate-source voltage of ±12 V. The drive voltage range for achieving the minimum Rds(on) is 2.5 V to 10 V — a 5 V logic-level gate drive will turn it on hard enough for most 20 V rails, but the 230 nC Qg means the upstream driver needs to source a few amperes peak to keep switching losses in check at frequencies above 100 kHz.

Package and thermal path

Housed in an 8-PowerVDFN (supplier package 8-PQFN, 5x6 mm), this is a surface-mount part with an exposed paddle on the bottom. The power dissipation rating tells the story: 3.6 W at ambient (Ta) versus 156 W at the case (Tc) — the difference is the thermal resistance of the board. For the 100 A rating to be usable, the PCB must have a large copper area and preferably thermal vias under the paddle to pull heat into an internal plane.

The 150°C Tj max gives headroom for fault conditions like load dumps or stalled fans, but the 3.6 W ambient dissipation limit means the board-level thermal design must be verified at the expected operating temperature.

Frequently asked questions

What is the closest equivalent or replacement for IRFH6200TRPBF?

For a direct substitute, verify the package (8-PQFN 5x6), Vdss (20 V), and Rds(on) target against other 20 V N-channel MOSFETs in the same footprint.