2.1 mOhm at 50 A — the conduction loss floor
The Infineon IRFH5302TRPBF is an N-channel HEXFET MOSFET in a PQFN (5x6) Single Die package. Continuous drain current is rated 32 A at 25°C ambient (Ta) and 100 A at case temperature (Tc). The Ta figure is the practical limit for a bare board layout; the Tc figure is the die capability with the paddle soldered to a sufficient copper area.
Total gate charge Qg is 76 nC at Vgs = 10 V. Input capacitance Ciss is 4400 pF at Vds = 15 V.
Operating junction temperature range is -55°C to 150°C. Power dissipation is derated to 3.6 W at ambient (Ta) and 100 W at case (Tc). The 3.6 W Ta limit reflects the PQFN (5x6) thermal resistance with standard PCB copper; the 100 W Tc figure assumes the exposed paddle is soldered to a thermal plane with adequate via array.
Active production — ROHS3 compliant
ROHS3 compliant.