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Infineon Technologies IRFH5300TRPBF

IRFH5300TRPBF N-Channel MOSFET, 30 V, 1.4 mOhm Rds(on)

MPNIRFH5300TRPBF
End of Life

Infineon HEXFET IRFH5300TRPBF, N-Channel MOSFET, 30 V Vdss, 1.4 mOhm Rds(on) at 50 A, 10 V, 120 nC gate charge, 8-PowerVDFN (5x6 mm PQFN).

$1.48Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFH5300TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C40A (Ta), 100A (Tc)
Power dissipation3.6W (Ta), 250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.35V @ 150µA
Rds on (Max) @ id, vgs1.4mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7200 pF @ 15 V

Product details

What this 30 V N-channel does in the circuit

The IRFH5300TRPBF is an Infineon HEXFET N-channel MOSFET rated for 30 V drain-to-source and a continuous drain current of 40 A at 25 °C ambient (Ta) or 100 A at the case (Tc) — the 100 A figure assumes the exposed paddle is soldered to a large copper pour on the PCB.

The gate charge at 10 V is 120 nC, which is moderate for a 30 V part in this package; a gate driver with 2 A peak current will switch it in about 60 ns. The input capacitance at 15 V drain bias is 7200 pF, so the driver sees a capacitive load that rises with the Miller plateau. For the full 1.4 mOhm, use a 10 V gate rail.

Package and thermal — the exposed paddle matters

The 8-PowerVDFN (also called 8-PQFN 5x6) has an exposed paddle on the bottom. The power dissipation rating of 250 W at the case (Tc) is only reachable if that paddle is soldered to a thermal land with vias to an inner-layer copper plane. The ambient rating of 3.6 W (Ta) is what you get with minimal copper — the real number sits between, set by the board layout. The operating junction temperature range is -55 °C to 150 °C, so it handles hot environments like a motor drive enclosure or an engine bay.

Sourcing — active production, no obsolescence worry

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IRFH5300TRPBF?

Low Rds(on) is critical for power efficiency in switching applications.

What is the gate charge of IRFH5300TRPBF?

Gate charge determines switching speed and drive requirements.

Is IRFH5300TRPBF in stock?

Immediate availability is needed to avoid production delays.

What is the price of IRFH5300TRPBF?

Cost affects BOM budgeting and competitive quoting.

What MOSFET can replace IRFH5300TRPBF?

Identifies alternative sources for supply chain flexibility.

What is the package of IRFH5300TRPBF?

Ensures PCB footprint and thermal management compatibility.